Electrical and Photo Conductivities in Heteroepitaxial Quasi Single-Crystal CVD-Diamond Detectors
نویسندگان
چکیده
The properties of CVD Diamond (CVDD) detectors such as high mobility of charge carriers, radiation hardness, and low dark conductivity provide a detector material, which is suggested to be applied in high intensity heavy-ion beam environments where classical detector devices cannot be operated [1]. In the future FAIR experiments radiation-hard materials with large area will be required for a variety of detection applications. Heteroepitaxial 'quasi' single crystal CVD diamond grown on wafer-scale Ir/YSZ/Si(001) substrates was investigated as an alternative to small-area homoepitaxial single crystal CVDD (scCVDD). Recent samples D1 and D2 of thicknesses dD1 = 290μm and dD2 = 320μm, respectively, showed interesting results in terms of structural homogeneity, charge collection efficiency, and dark conductivity.
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